Abstract
Deposition of various metals and of germanium as well as chemisorption of oxygen on GaAs(110) surfaces was found to result in the same final band bendings on the GaAs side of the junctions formed. However, the position of the Fermi level with respect to one of the band edges at the interface differs by 0.25 eV on p- and n-type substrates. Starting from flat bands at the clean surfaces this pinning of the Fermi level is completed after covering the surface with about one tenth of a monolayer. The energy levels of chemisorption-induced defects were thought to cause these experimental findings. Chemical trends in the barrier heights observed with Schottky barriers on III–V, II–VI, and III–VI compounds as well as on mixed III–V alloys seem to give support to the defect model. At present, antisite defects seem to be the most promising candidates for such defects, although final evidence is missing. The exceptional behavior of Au Schottky barriers on some compound semiconductors is discussed, too.
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