Abstract
Effective charges attributed to surface atoms at single crystal polar or nonpolar surfaces of ionic semiconductors are changed only by less than one percent as compared with bulk values. Formation of intrinsic point defects or extrinsic chemisorption-induced defects, however, may lead to significant charge redistribution and hence to significant changes in core-level binding energies as well as valence band features. The energies relative to the Fermi energy of uppermost occupied electronic states attributed to neutral, negative, and positive adsorption complexes determine the direction of an additional delocalized charge exchange between free electrons in the semiconductor and defects or adsorption complexes.
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