Abstract
Abstract Nearly regular tetrahedral silicon bond configuration and a considerably distorted ring characterize the p -bis(trimethylsilyl)benzene molecular geometry according to an electron diffraction study. The SiC methyl bond is longer than the SiC phenyl bond, in agreement with expectation but contrary to an X-ray diffraction determination. The extent of ring deformation is consistent with the electropositive character of the trimethylsilyl substituent and with the structural variations in other para -disubstituted benzene derivatives. The electron diffraction data are consistent with either free rotation around the SiC phenyl bonds or with a rotamer deviating by about 15° from the eclipsed form. The following bond lengths ( r g , pm) and bond angles (°) have been determined with parenthesized estimated total errors: (CC) mean 140.8(3), (C ipso )(C ortho C meta ) 1.6(7), (SiC) mean 188.0(4), (SiC methyl )(SiC phenyl ) 3.3(7), (CH) methyl 111.3(3), CC ipso C 115.7(6), and C phenyl SiC methyl 109.2(4).
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