Abstract
Chemical vapor deposition (CVD) of tungsten by the hydrogen reduction of WF6 is increasingly important in very large scale integration technology. There is, however, a concern about possible interference of this CVD process by the reaction of WF 6 with the SiO 2 mask material. Because of disagreement between thermodynamic calculations and some experimental evidence concerning this reaction, the reaction was examined by several techniques not previously employed. Oxide coated silicon wafers were exposed to the hexafluoride in argon, with and without hydrogen present, at several temperatures from room temperature to 400 o C
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