Abstract
The crystallization behavior of chemical-solution-deposited and amorphous Ba0.7Sr0.3TiO3 (BST) thin films was analyzed with respect to the evolution of the structural and dielectric properties of the films as a function of the annealing temperature. The amorphous films were produced by oxygen ion implantation into crystalline BST thin films. In the amorphous thin films, the crystallization to the perovskite phase occurred at T 5 550°C, whereas the as-deposited CSD films showed the first crystalline XRD-reflex only after annealing at T 5 650°C. Here a carbon-rich intermediate phase delayed the crystallization process to higher temperatures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
