Abstract
Abstract ODMR has proved to be a very successful technique for studying recombination processes in II–VI semiconductors. The increase in resolution compared with optical spectroscopy can exceed five orders of magnitude and often makes possible precise identification of the centres that participate in the recombination. Accurate determination of the structural and magnetic properties of defects and impurities is possible and the interactions between recombining centres can be investigated. The purpose of the paper is to describe the general principles of ODMR, with particular emphasis on recent developments for II–VI compounds and their alloys.
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