Abstract
Laser induced thermal desorption (LITD) has proven to be an effective probe of reaction kinetics on single-crystal surfaces. The ability of LITD techniques to measure adsorption, decomposition and desorption kinetics will be illustrated by studies of SiCl4 and (CH3CH2)2 SiH2 on Si(111)7X7. Silicon tetrachloride, SiCl4, is important in silicon epitaxial growth and diethylsilane, (CH3CH2)2 SiH2, is a promising candidate for silicon atomic layer epitaxy. The desorption products, sticking coefficients and decomposition and desorption kinetics measured by these LITD investigations are important for an understanding of silicon epitaxy by chemical vapor deposition.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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