Abstract
Exposure of dilute solutions of Me3SiCCH in CD3OD to 60Co γ-rays at 77 K gave mainly H(D)CĊSiMe3 radicals together with traces of H2CCSiMe3. The relative concentration of the latter increased markedly on annealing, presumably via proton transfer. The results suggest that electron addition is followed by protonation and hence that the anion of HCCSiMe3 is strongly basic. The β-proton hyperfine coupling of 59 G for the monodeuterio derivative is equal to that for the two β-protons in H2CCSiMe3, and also equals the 2H coupling after correction for the difference in proton/deuteron magnetogyric ratios. Hence the radical must be linear, the SOMO being, nominally, the in-plane 2p orbital on the carbon atom bound to silicon. The β-proton coupling for the radical Me3Si(H)CĊSiMe3 formed similarly from Me3SiCCSiMe3 is much greater (76 G), suggesting that this radical is bent, with a trans configuration, favouring overlap with the C—H bonding orbital. Exposure of the pure liquids to a beam of positive muons gave the corresponding muonated radicals, H(µ)CĊSiMe3 and Me3Si(µ)CĊSiMe3. The muon–electron hyperfine couplings, corrected for the difference in the magnetic moments, were both greater than the corresponding proton couplings by a factor of 1.14; reasons for this enhancement are discussed.
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