Abstract
AbstractA study of the properties of As‐doped and undoped GeMoW contacts prepared by different annealing techniques leads to the optimization of a new refractory ohmic contact consisting of an As‐doped Ge‐layer deposited by electron beam evaporation and sputter‐deposited Mo and W films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have