Abstract
Elementary processes of the formation of vanadium oxide overlayers by the adsorption-decomposition of VO(OC 2 H 5 ) 3 vapor on high-surface area SiO 2 were studied by IR (infrared) spectroscopy, TPD (temperature-programmed decomposition), and the stoichiometry of the surface reactions. In this study the adsorption-decomposition process will be called a CVD (chemical vapor deposition) cycle. The structure of the vanadium oxide prepared by repeated CVD cycles was characterized by XRD (X-ray diffraction) and XPS (X-ray photoelectron spectroscopy)
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