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Abstract
AbstractThe formation of silicon carbonitride films from a gas mixture of cyclic methylsilazane ((CH3SiHNH)n with the major component being n = 4 for the liquid compound) and hydrogen on a single‐crystal silicon (100)‐face as the substrate is carried out in a resistance‐heated cold‐wall quartz reactor at normal pressure at 873‐1073 K. The title compound, a ternary phase in the Si‐C‐N system, has properties between silicon carbide and silicon nitride, such as high thermal and chemical stability.
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