Abstract
Copper indium disulfide (CuInS{sub 2}) thin films for photovoltaic applications were grown by close-spaced vapor transport in a vertical reactor closed under vacuum. Solid iodine was used to provide the reagent. Optimal deposition conditions were determined by studying samples deposited on soda-lime glass with X-rays, scanning electron microscopy, energy-dispersive spectroscopy, optical absorption, and Hall effect. The stoichiometry temperature range is relatively large compared to other I-III-Vi compounds; the lower limit ({approximately}370 C) corresponds to the formation of CuI in the layers and the upper limit ({approximately}680 C) is imposed by the glass substrate. No phase change was observed in this temperature range. All the layers are p-type conducting, with carrier densities of the order of 10{sup 16} cm{sup {minus}3} and high mobility values in certain cases.
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