Abstract
Ta is easily etched by chlorine plasmas in spite of the low vapor pressure of the reaction product, i.e. Ta-chloride. In order to clarify the etching mechanism of Ta in relatively low temperature conditions below 25°C, optical emissions were monitored. Contrary to the case of Al etching, the emission intensity of atomic chlorine, which is assumed to be an active etching species, becomes stronger during Ta etching as if it is a reaction product itself. This suggests that molecular chlorine reacts with Ta as strong as atomic chlorine, and that the reaction, especially the desorption process of the reaction product, is strongly assisted by ion bombardment, and that the reaction product, TaCl x , is sputtered off the surface to form partly as decomposed TaCl x−1 and atomic chlorine
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
