Abstract
ZnS: Cu films are prepared with a chemical nonvacuum technique by joint pyrolysis of zinc and copper dithiocarbamates at a substrate temperature between 260 and 300°C. It is shown that the films have the hexagonal lattice and are polycrystalline, with grains oriented mostly in the 〈0001〉 direction. The luminance-voltage characteristics, charge-voltage characteristics, brightness waveforms, electroluminescence spectrum, and degradation characteristics of the phosphors are investigated. A mechanism of electroluminescence and the degradation type are discussed. It is concluded that the MOCVD technique is promising for fabricating ZnS: Cu electroluminescent films.
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