Abstract
Chemically manipulated anomalous Hall effect (AHE) and perpendicular magnetic anisotropy (PMA) have been studied in MgO/[Co/Pt]3/MgO multilayers by introducing a Mg metal layer between the Co layer and the top MgO layer. It is shown that the saturation anomalous Hall resistivity (ρAH) and effective magnetic anisotropy (Keff) are 125% and 26% larger than those in the multilayers without Mg insertion, respectively. The X-ray photoelectron spectroscopy (XPS) analysis shows that the enhancement of AHE and PMA is primarily ascribed to effective control of chemical states at the Co/MgO interface.
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