Abstract
K +-ISFETs are prepared by grafting, on the silica gate insulator surface, silylated crown-ether molecules which were synthesized for the first time. Three grafting reactions were tested. The responses of the grafted ISFETs are sub-nernstian. They are analyzed through the modified site-binding model and the density of grafted sites was found to be equal to 6×10 12 cm −2 with the chloro-silylated molecule and 13×10 12 cm −2 with the dimethylamino-silylated molecule, the complexation constant of K + ions being found to be equal to 10 2.1.
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