Abstract
We have evaluated the effects of polymer structure on chemically amplified negative resists in terms of alkaline solubility, adhesion, and lithographic performance. Poly(hydroxytricyclo [5.2.1.02, 6]decyl acrylate (TCDAOH)67-carboxytetracyclo[4.4.0.12, 517, 10]dodecyl acrylate (CTCDDA)33) exhibits sufficient alkaline solubility (dissolution rate (DR): 0.56μm/s in 2.38wt% TMAH solution) for use as a negative resist polymer, and a resist based on this polymer provides 0.17 μm line-and-space (L/S) resolution. By way of contrast, poly(TCDAOH60- CTCDDA40) (D.R.: 0.95μm/s) dose not provide good resolution because the developer permeates into the pattern. To improve adhesion, we have developed three new acrylate monomers: 3, 4-epoxytricyclo[5.2.1.02, 6]decyloxyethyl acrylate (ETCDEA), 5-acryloyloxy-6-hydroxynorbornane-2-carboxylic 6-lactone (AHNCL), and 3, 4-dihydoroxy tricyclo[5.2.1.02, 6]decyloxyethyl (meth)acrylate (DTCDE(M)A). A resist based on poly(TCDAOH64-CTCDDA31-DTCDEA5) provided a 0.15-μm- resolution isolated line pattern, and a resist based on poly(ETCDEA42-CTCDDA32- AHNCL26) provided a 0.13-μm-resolution isolated line pattern. Both patterns were free of pattern stripping.
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