Abstract
Transparent electrically conducting SnO2 films were prepared by chemical vapour deposition technique. The films were obtained at various deposition temperature ranging from 350 to 500 degrees C by stannous chloride oxidation. The SnO2 films thus produced have a conductivity of 50-700 (ohm cm)-1, an n-type carrier concentration of 1*1019-6*1020 cm-3 and a Hall mobility of 7.8-31.2 V-1 s-1 depending on the deposition conditions. The studies on the variation of conductivity with temperature indicated two donor activation energies for the films.
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