Abstract
Ferroelectric lead titanate thin films were deposited on the TiO2 coated Si(100) substrate by chemical vapour deposition under atmospheric pressure. We have used Pb powder and tetraethyle-orthotitanate [Ti(C2H5O)4] as the source material of Pb and Ti vapour. We investigated the variations of the phase of deposited films with the Ti(C2H5O)4 input fractions. When the mole fraction was 0.021, PbTiO3 single phase was obtained. For the other Ti(C2H5O)4 input fractions, we could find PbO solid solutions phase in addition to the PbTiO3 phase. The results of AES analysis revealed that the TiO2 layer on the Si substrate acted as diffusion barriers between Si substrate and PbTiO3 films.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
