Abstract
Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.
Highlights
Two dimensional (2D) materials such as graphene and hexagonal boron nitride (h-Boron nitride (BN)) have attracted scientific and technological interest for potential applications in generation electronics
Hexagonal boron nitride (h-BN) is an electrical insulator that can be regarded as the dielectric equivalent of graphene, in the sense that both materials have 2D honeycomb lattices that are commensurate (Kim et al 2012; Xu et al 2013)
In addition to insulating properties, h-BN has high chemical resistance, high thermal stability, low dielectric constant, high mechanical strength and high corrosion resistance leading to potential applications (Meric et al 2013; Kubota et al 2007)
Summary
Two dimensional (2D) materials such as graphene and hexagonal boron nitride (h-BN) have attracted scientific and technological interest for potential applications in generation electronics. In addition to insulating properties, h-BN has high chemical resistance, high thermal stability, low dielectric constant, high mechanical strength and high corrosion resistance leading to potential applications (Meric et al 2013; Kubota et al 2007) These properties translate into attractive applications like substrate for graphene electronics, single photon emitters, charge leakage barriers and lubricants (Song et al 2010). Experimental thermal conductivity on h-BN is reported to be 360 W/m K at room temperature which is many times higher than that of SiO2 making it a better candidate as the dielectric material for heat generating electronics (Jo et al 2013) All of these studies employed, h-BN flakes exfoliated from h-BN crystals limiting technological use of these films. We present a route for growth of hexagonal boron nitride (h-BN) by CVD using ammonia-borane (H3N-BH3) as the BN precursor with precise details of sublimation conditions
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