Abstract
Crystalline and amorphous compounds of boron with phosphorus have been deposited as thin films on fused silica, monocrystalline silicon, nickel and tungsten substrates. Process conditions have been established for chemical vapour deposition (CVD) of epitaxial, polycrystalline, and amorphous deposits of cubic boron monophosphide (BP), rhombohedral boron subphosphide (B 13P 2, and an amorphous phase of variable stoichiometry (B xP).
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