Abstract
The chemical vapor transport and homoepitaxial growth of ZnTe are investigated in the ZnTe-HCl closed-tube system. The transport rate increases monotonically until 0.1 mg/cm 3 and then increases rapidly with the increase of HCl concentration. The growth rate of the (110) epi-layer has the same HCl concentration dependence as the transport rate. The surface morphology of epitaxial layers grown on (110) substrate is uneven, while that on (110) substrate is relatively smooth. Large amounts of dendritic crystals are observed deposited on the ampoule at high HCl concentration where the high transport rate occurs. The experimentally obtained transport rate can be explained quantitatively over the whole range of HCl concentration using thermodynamic calculations considering laminar, diffusion and convection flows.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
