Chemical vapor deposition synthesis of sp2-BN film on 2-inch Si substrates for bipolar resistive random access memory device

Abstract

Resistive random access memory (RRAM) devices with Au/sp2-BN/p-Si sandwich structure have been successfully fabricated. Single precursor ammonia borane (NH3BH3) chemical vapor deposition (CVD) was used to directly grow amorphous sp2-BN film on a 2-inch commercial p-type Si substrate without any extra catalyst. The sp2-BN-based RRAM device exhibit reproducible switching endurance (>1000 cycles), long retention time (>1 × 104 s), capability to operate under appropriate voltages (between 2.225 V and 1.475 V for SET process) as well as large area uniformity (2 inch). The resistance value of low resistance state (LRS) is as high as 3 × 103 Ω and the typical VSET/ISET and VRESET/IRESET are 4.292 × 10−4 A @ 1.925 V and 6.143 × 10−4 A @ −0.862 V, respectively. A boron vacancies (VB) induced mechanism similar to valence change memory (VCM) has been used to explain the parameters of noble Au/sp2-BN/Si RRAM device such as, RESET stop voltage, temperature and device area dependence of resistances (both low & high states). This work will propel the combination of low power consumption in sp2-BN based RRAM with Si based electronics devices.