Abstract
The integrated chemical vapor deposition (CVD)–physical vapor deposition (PVD) Al plug process was successfully applied to capacitor-over-bit-line-type dynamic random-access memory process flow for the simultaneous formation of plugs and wires. The CVD-PVD Al film completely filled re-entrant vias with aspect ratios up to 10:1, and Al plugs showed lower via resistance compared with that of conventional W plugs. The PVD Al temperature can be as low as 350 °C, which is compatible with most low-dielectric-constant intermetal dielectric materials. However, outgassing from the intermetal dielectric was critical to complete via filling of the CVD-PVD Al film, and the conventional degassing process was insufficient for eliminating outgassing from hydrogen silsesquioxane. Sufficient baking after the via etching was effective for eliminating outgassing, and complete via filling was achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
