Abstract
A C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiClx(g), generated by reacting between TiCl4(g) and Ti(s) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30−80 nm, length several micrometers) on a C54-TiSi2 film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi2 film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field Eo and field enhancement factor β, of the vertically grown TiSi NWs were determined to be 5.25 V μm−1 and 876, respectively.
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