Abstract
The chemical and deposition properties of RuO2 thin films with the liquid precursor Ru(OD)3 (OD = 2,4-octanedionate) have been investigated. By thermal analysis, Ru(OD)3 was thermally stable in Ar atmosphere and rapidly reacted with oxygen at about 270°C. The RuO2 thin films deposited at 250-550°C had a dense and octahedral-like morphology and the minimum resistivity was 48 μΩ cm at a deposition temperature of 350°C. © 1999 The Electrochemical Society. S1099-0062(99)06-130-1. All rights reserved.
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