Abstract
We have deposited aluminum (Al) features on silicon (Si) surfaces using the lectron beam and electric field produced at the tip of a scanning tunneling microscope (STM), in both tunneling and field emission modes. Lines as small as 3 nm in width have been produced on crystal Si(001). Al deposition is accomplished by exposing the tip-sample junction to trimethylaluminum (TMA) gas while tunneling. The electron beam of the STM tip dissociates the TMA molecules adsorbed on the surface, resulting in the production of surface-bound Al and hydrocarbon gas. Independent Auger electron spectroscopy studies of the electron induced deposition of Al from TMA shows nearly pure Al deposits.
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