Abstract
The MoS2 films were deposited on the titanium nitride (TiN) substrate using chemical vapor deposition (CVD) method. The molybdenum hexacarbonyl (Mo(CO)6) and hydrogen sulfide (H2S) as a precursor and reaction gas, respectively. Preliminary analysis of Mo(CO)6 which decomposed about 200 degree Celsius under low pressure condition was carried out using Fourier transform infrared spectroscopy (FT-IR). The MoS2 films deposited under the various substrate temperature, chamber pressure, and flow rate were analyzed using scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. The result of Raman spectroscopy shows the bulk MoS2 Raman shift for samples deposited on the specific conditions.
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