Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates.

Jianyi Chen,Bo Liu,Wu Zhou,Hu Young Jeong,Hyeon Suk Shin,Wei Liu,Dechao Geng,Kian Ping Loh,Yanpeng Liu,Xiaoxu Zhao,Tianhua Ren,Wei Tang,Bingbing Tian

doi:10.1002/advs.201600033

Abstract

Large-sized MoS2 crystals can be grown on SiO2/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS2 crystals can reach ≈30 cm2 V-1 s-1, which is comparable to those of exfoliated flakes.

Highlights

Post-graphene, there is intense interest in transition metal dichalcogenide (TMD) owing to its unique properties of large spin-orbit coupling and a bandgap, which offer new possibilities in electronics and valleytronics.[1,2,3] MoS2 is one of the most widely studied TMDs
The induction stage is needed to isolate the growth substrate before the targeted high temperature and equilibrium evaporation rate is reached, since the nucleation and growth can occur during heating stage (Figure S2, Supporting Information), resulting in the formation
MoS2 crystals were grown on SiO2/Si substrates with sulfur (S) and molybdenum trioxide (MoO3) as the precursors using a modified chemical vapor deposition (CVD) system (Figure 1a)

Summary

Introduction

Post-graphene, there is intense interest in transition metal dichalcogenide (TMD) owing to its unique properties of large spin-orbit coupling and a bandgap, which offer new possibilities in electronics and valleytronics.[1,2,3] MoS2 is one of the most widely studied TMDs. We found that, by controlling the growth process under ambient pressure using a two-stage CVD method, the nucleation density of MoS2 can be significantly reduced, forming large-sized crystals.

Results

Conclusion