Abstract
The compound [Ga(S-i-Pr)2(μ-S-i-Pr)]2, a thermally stable solid with a low melting point, was used as a single-source precursor to gallium sulfide films in a low-pressure chemical vapor deposition process. Film depositions were carried out at substrate temperatures in the range 350−610 °C. The films were determined to have a Ga2S3 stoichiometry by Rutherford backscattering and energy-dispersive X-ray spectrometries. X-ray diffraction studies showed that the films deposited on glass, silicon, and YSZ (111) substrates were composed of γ-Ga2S3, α-Ga2S3, and highly oriented γ-Ga2S3, respectively.
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