Abstract
Data are presented on the kinetics and mechanism of copper deposition from Cu(dpm)2 vapor in a hydrogen atmosphere at normal pressure. From kinetic analysis of the deposition rate as a function of substrate temperature (200–390°C) and Cu(dpm)2 vapor pressure (≤7.8 Pa), the main parameters of kinetically limited deposition were determined: activation energy of 27 ± 7 kJ/mol, preexponential factor of (2.9 ± 1.8) × 102 cm/s, and reaction order of unity. Under diffusion-control conditions, the diffusion rate constant is 4.8 cm/s, and the thickness of the diffusion layer is 8 × 10–2 cm. The films grow by a mixed (island–layer) mechanism, and their electrical resistivity is close to that of bulk copper.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
