Abstract
Inorganic semiconductors usually show n-type characterization; the development of p-type inorganic semiconductor material will provide more opportunities for novel devices. In this paper, we investigated the chemical vapor deposition (CVD) of p-type cuprous phosphide (Cu3P) nanofilm and studied its thermal oxidation behavior. Cu3P film was characterized by optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), laser Raman spectroscopy (Raman), and fluorescence spectroscopy (PL). We found that the thickness of film ranged from 4 to 10 nm, and the film is unstable at temperatures higher than room temperature in air. We provide a way to prepare inorganic phosphide nanofilms. In addition, the possible thermal oxidation should be taken into consideration for practical application.
Highlights
Due to the intrinsic band structure and crystal defects, inorganic semiconductors usually exhibit natural n-type transporting property [1]; the development of a p-type inorganic semiconductor attracts considerable interest for the development of novel devices based on p-n junctions [2,3,4]
Cuprous phosphide is generally considered stable in air [20], so is it really stable when the temperature is slightly higher than the room temperature? we studied the thermal oxidation properties of Cu3P
When temperature is higher than room temperature, Cu3P will be oxidized in the air, which should be taken into consideration during practical application
Summary
Due to the intrinsic band structure and crystal defects, inorganic semiconductors usually exhibit natural n-type transporting property [1]; the development of a p-type inorganic semiconductor attracts considerable interest for the development of novel devices based on p-n junctions [2,3,4]. Chemical Vapor Deposition and Thermal Oxidation of Cuprous Phosphide Nanofilm. Copper compounds generally show ptype properties, such as cuprous oxide, cuprous sulfide and cuprous halide [5,6,7], and cuprous phosphide (Cu3P) is one of them. Pfeiffer et al synthesized Cu3P particle film with a thickness of ca.
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