Abstract
Chemical vapor deposition method can prepare perovskite films with controllable morphology and adjustable photoelectric properties. In this work, we have prepared CsPbI2Br films at 400 °C–700 °C using chemical vapor deposition method. The grain size of perovskite film increases with the deposition temperature increment because higher temperature provides greater driving force for nucleation expansion. CsPbI2Br film deposited at 600 °C shows nanofiber structure with polycrystalline property accompanied by local single crystal structure. Steady-state and time-resolved fluorescence measurement explored the charge carrier recombination process of perovskite films. The photodetector based on CsPbI2Br film deposited at 600 °C shows excellent photoelectric response and switching ratio characteristics. This is ascribed to low defect density and fast charge transport along 1D fiber channels.
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