Abstract
The degree of Peierls distortion and the fraction of tetrahedral units in amorphous Ge–Sn–Te phase-change memory materials are gradually reduced as the Sn content gets richer.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
