Abstract
A vapour jet etching method and suitable equipment are tested in order to thin monocrystalline and polycrystalline material of GaAs, InP and InAs for transmission electron microscopy. The reactive vapour jet consists of air, bromine and methanol. The thinning procedure is monitored by an optical microscope. Large thin areas could be obtained using a bubbler temperature of 60° C, 20% bromine in methanol, a distance between nozzle and sample surface of 1.5 mm and a nozzle mouth diameter of 0.7 mm. During pre-etching the vapour flow rate was 0.71 min−1, and 0.31 min−1 was realized during final etching up to perforation. The etching times ranged between 1 to 2 min with an initial sample thickness of 350 to 365 μm. Large thin areas have only been obtained using an excentric position of the nozzle with respect to the sample centre in combination with a manual rotation of the specimen holder.
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