Abstract
Interfacial chemical structure of HfO2/Si (100) is investigated using angle-resolved synchrotron radiation photoemission spectroscopy (ARPES). The chemical states of Hf show that the Hf 4f binding energy changes with the probing depth and confirms the existence of Hf-Si-O and Hf-Si bonds. The Si 2p spectra are taken to make sure that the interfacial structure includes the Hf silicates, Hf silicides and SiOx. The metallic characteristic of the Hf-Si bonds is confirmed by the valence band spectra. The depth distribution model of this interface is established.
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