Abstract
We have investigated chemical-state-resolved depth profiles and band discontinuity for TiN/HfSiON gate stack structure with an AlOx cap layer on a Si substrate using backside angle-resolved photoemission spectroscopy. Depth profiles show that Al atoms diffuse through the high-k layer and are accumulated at the high-k/SiO2 interface during the thermal annealing process. The decrease in relative chemical shift of Si 2p to Hf 4f core-level spectra by inserting the AlOx cap layer can be explained by the lowering of the valence-band discontinuity, which is induced by the modification of the interface dipole of the high-k/SiO2 system.
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