Abstract
The International Scientific Research Organization for Science, Engineering and Technology (ISROSET) is a Non-Profit Organization; The ISROSET is dedicated to improvement in academic sectors of Science (Chemistry, Bio-chemistry, Zoology, Botany, Biotechnology, Pharmaceutical Science, Bioscience, Bioinformatics, Biometrics, Biostatistics, Microbiology, Environmental Management, Medical Science, Forensic Science, Home Science, Library Science, Material Science Military Science, Physical Science, Physical Education Science, Educational Science, Fisheries, seed technology, Agriculture, Forestry Science, Mathematics, Physics, Statistics and Geology/Earth Science), Computer Science, Engineering and Information Technology, Commerce, Management, Economics Sociology and Social Science.
Highlights
In recent years the metal sulfides have been attracted in the field of photovoltaic and super capacitor applications
The SnS thin films can be prepared by several methods such as Spray Pyrolysis technique [8,9,10,11], Successive Ionic Layer Absorption and Reaction Method (SILAR) [12], Magnetron Sputtering [13], Chemical Bath Deposition [14], Pulsed Laser Irradiation [15], Spin Coating [16]
Films Pure and transition metal doped Tin sulfide (SnS) thin films have been deposited on the micro class substrate with different doping level of cadmium using chemical Spray
Summary
In recent years the metal sulfides have been attracted in the field of photovoltaic and super capacitor applications. The thin films are widely used in fabrication of photovoltaic devices. Materials containing post-transition metals with an ns electronic configuration (e.g. Pb2+, Sn2+, Ge2+, Sb3+ and Bi3+) are attracting significant recent attention for their ability as solar absorbers [2]. Tin sulfide (SnS) thin films have emerged as alternative absorber layers and promising material for low coast thin films solar cells technology. Tin sulfide is a binary semiconductor with wide range of applications and optoelectronic devices [4]. Tin chalcogenide compounds such as SnS2, SnS2 have role in fabrication of photovoltaic devices. Tin mono sulfide (SnS) is very promising material for the optoelectronic devices and direct band gap around 1.35 eV [5]. The SnS thin films can be prepared by several methods such as Spray Pyrolysis technique [8,9,10,11], Successive Ionic Layer Absorption and Reaction Method (SILAR) [12], Magnetron Sputtering [13], Chemical Bath Deposition [14], Pulsed Laser Irradiation [15], Spin Coating [16]
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