Abstract
Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300keV xenon ions to a fluence of 1015cm−2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si–C) bonds but also homonuclear (Si–Si and C–C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.
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