Abstract
The in-air high-resolution PIXE system composed of a flat analyzing crystal and a position-sensitive proportional counter was applied to measure line shifts of Si Kα and P Kα X-rays from various samples induced by an external proton beam. Line shifts that reflect chemical environments of atoms in target samples were determined with the precision of 0.1 eV. The utility of the method for chemical state analysis of minor elements down to the order of 0.1% was demonstrated.
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