Abstract
Photon-stimulated desorption of F/sup +/ from Si(111) was studied with use of photon energies in the region of the Si 2p core level. Fluorinated surfaces with variable amounts of SiF/sub x/ groups were prepared, and distinct photon-stimulated--desorption thresholds in the Si 2p region were observed for F/sup +/ desorption from SiF vs SiF/sub 3/ surface groups. In addition, the angular distributions of the ejected F/sup +/ showed variations with respect to the Si(111) surface normal dependent on the bonding configuration, which were used to obtain local 2p absorption spectra for the individual SiF/sub x/ groups.
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