Abstract
The interaction of halogens on GaAs surfaces lies at the heart of a whole host of dry-etching methods. This paper considers the adsorption characteristics of chlorine on GaAs(100)(4*1) and the effect of low-energy ion bombardment on the chemisorbed states formed. The results are discussed in relation to ultra-low damage and low contamination chemically assisted ion beam etching (CAIBE) processes.
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