Abstract
The interface of GaAs and its native oxide is shown to exhibit a region of excess As. The amount of this excess is increased by laser annealing of the oxide layers with a corresponding change of the depletion layer capacitance being observed. The migration of As out of the surface of GaAs is clearly observed when Al is deposited on GaAs but not when Ga is deposited. MOS structures, formed by a series of new processing steps, avoid the formation of excess As in the insulator region and As vacancy related traps in the semiconductor region of the interface. The C–V characteristics of these structures show improvements over those produced by conventional oxidation methods.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
