Abstract
CaBi4Ti4O15 (CBTi144) thin films were prepared by spin-coating a precursor solution of metal alkoxides. As-deposited thin films began crystallization below 550°C and reached full crystallinity of a single phase of layered-perovskite at 650°C via rapid thermal annealing in oxygen. 650°C-annealed CBTi144 thin film showed random orientation and had a columnar structure on Pt-passivated Si substrate. The dielectric constant and loss factor were 300 and 0.033, respectively, at 100 kHz. The thin film exhibited P-E hysteresis loops. The remanent polarization (Pr) and coercive electric field (Ec) were 6.0 μC/cm2 and 78.7 kV/cm, respectively, at 9 V. The thin film showed good endurance properties against number of switching cycles.
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