Abstract
Chemical phase separation is an important issue for process integration of non-crystalline Zr and Hf silicate alloys into advanced microelectronic devices. Chemical phase separation of Zr silicates into ZrO 2 and SiO 2 has been detected by different spectroscopic techniques, including Fourier transform infrared, X-ray photoelectron, X-ray absorption, and extended X-ray absorption fine structure spectroscopies, as well as X-ray diffraction and high resolution transmission electron microscopy imaging. This combination of techniques identifies an unambiguous way to distinguish between chemical phase separation with different degrees of micro- and nano-crystallinity. This is important since all modes of chemical separation degrade dielectric properties required for device applications.
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