Chemical Pathways from Atomic Silicon Ions to Silicon Carbides and Oxides

Abstract

Ion/molecule reactions initiated by ground-state atomic silicon ions are described which lead to Si-C and Si-O bond formation. They are viewed as the first steps in the chemical pathways leading from atomic silicon to the formation of silicon carbide and oxide molecules of the type which may be precursors for the formation of silicon carbide and silicate grain particles in carbon-rich and oxygen-rich astrophysical environments.