Abstract
Ultrahigh vacuum studies of reactive and unreactive metals on a wide range of semiconductors reveal new systematics of Schottky barrier formation. Surface work function, band bending, and chemical bonding measurements indicate several qualitatively different mechanisms of barrier formation, each determined by the degree of interface chemical reactivity. In general, the Schottky barrier formation can be characterized by a twofold process—local charge redistribution plus surface space charge transfer. The specific interface bonding determines the sign and magnitude of the local charge redistribution. Correlations between these interface phenomena and deviations from ideal barrier heights suggest a framework based on interface bonding for determining Schottky barrier heights.
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