Abstract
We report on the use of mixed abrasives slurries (MAS) containing boron carbide and ceria abrasives for chemical mechanical polishing of sapphire wafer. Possible MAS configuration theory was presented, on the basis of which a material removal rate as high as and good surface with a root mean square (rms) of were achieved. Through a succedent reactive ion etching process, we further improved the sapphire surface quality to an rms of , which showed a finely global planarization of the wafer had been achieved.
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