Chemical Gradient of Contact Hole Latent Image Created in Chemically Amplified Extreme Ultraviolet Resists

Abstract

A contact hole pattern as well as a line-and-space pattern is a basic element for the fabrication of semiconductor devices. The critical dimension uniformity and edge roughness of contact hole patterns are critical issues for extreme ultraviolet (EUV) lithography. In this study, the quality of the latent images of contact hole patterns was investigated in terms of the chemical gradient using a simulation on the basis of the reaction mechanisms of chemically amplified EUV resists. The latent image formation of contact hole patterns was compared with that of line-and-space patterns. The latent image quality of contact hole patterns was significantly lower than that of line-and-space patterns. To obtain the same latent image quality as line-and-space patterns, the exposure dose should be increased 1.4±0.1 times. Similarly to the line-and-space patterns, the increase of acid generator concentration and effective reaction radius is effective for the enhancement of latent image quality. For the enhancement of latent image quality of contact hole patterns, the enhancement of the effective reaction radius is more effective in a low exposure dose region than a high exposure dose region.