Abstract
AbstractEtching of hydrogen-terminated Si(100) in deoxygenated water produces surfaces with a regular nanoscale topography. Surface infrared spectroscopy provides detailed information about this topography via interrogation of the silicon hydride species that populate this highly ordered surface. Here we investigate the feasibility of using siloxane chemistry to functionalize this surface while preserving the initial topography. The critical step in silanization to form high-quality organic layers is oxidative cleaning of the surface. By re-etching oxidized surfaces in hydrofluoric acid, we can repopulate surface hydride species and examine any apparent changes in topography that resulted from the oxidation step. We compare three different oxidation protocols and find that an SC-2 clean results in the least perturbation of the original topography. Preliminary results using both dynamic contact angle and atomic force microscopy suggest that the SC-2 oxidized surface can be functionalized with alkylsilane reagents to create a functionalized surface with regular, nanoscale topography, with all surface processing carried out under ambient conditions at or near room temperature.
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